transistor collector
英 [trænˈzɪstə(r) kəˈlektə(r)]
美 [trænˈzɪstər kəˈlektər]
网络 晶体管集电极
双语例句
- A transistor has three electrodes, the emitter, the base and the collector.
晶体管有三个电极，即发射极、基极和集电集。 - Construction and Application of the Multi-channel Electrophysiological Recording System; A transistor has three electrodes, the emitter, the base and the collector.
多电极电生理系统建立、完善及应用晶体管有三个电极，即发射极、基极和集电集。 - Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论NPN型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。 - The region in a transistor between the emitter and the collector.
晶体管中发射极和集电极之间的区域。 - Therefore, if we have a way of holding emitter current constant through a transistor, the transistor will work to regulate collector current at a constant value.
于是，只要我们能让晶体管的发射极电流保持恒定，它就能保持发射极电流为恒定值。 - Remember, the transistor's collector current is almost equal to its emitter current, as the α ratio of a typical transistor is almost unity ( 1).
不要忘了，通常典型晶体管的系数α乎是1，因此晶体管集电极电流与发射极电流也几乎是相等的。 - For example, a transistor is a controllable switch, but it is directional between the collector and emitter, and it has interactive control between the base and emitter.
例如，晶体管是可控的开关，但它在集电极和发射极之间是定向的，并且在基极和发射极之间是配合控制的。 - We've seen already how maintaining a constant base current through an active transistor results in the regulation of collector current, according to the β ratio.
我们已经看到有源晶体管的恒定的基极电流是如何以系数β制集电极电流的。 - The low phase noise potential of K-band VCO using NPN silicon-Germanium transistor with low noise floor, high cut-off frequency ( 70GHz) and high collector current capacity has been studied in detail.
因此在设计中，选用了具有低噪声基底、高截止频率（70GHz）、高集电极电流容量的锗化硅材料的NPN晶体管，有利于提高系统的噪声性能。 - Essentially, the structure of linear magnetic field sensor is same as a bipolar lateral transistor with twin base and twin collector.
其结构为横向双基极、双集电极晶体管，器件对磁场呈线性响应。 - A vertical PNP transistor with P-buried collector is used as injector which is merged with the downward operating NPN transistor.
该结构采用P埋集电极纵向PNP晶体管作注入器，巧妙地实现了与正常向下工作的NPN晶体管并合。 - We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。 - Under the state of optimum operation of the amplifier, the following basic amplifier parameters are determined: the waveforms of the collector current, the collector-to-emitter voltage, the instantaneous power dissipated in the transistor, the collector efficiency, and the values of the load-network components.
在最佳工作状态下，确定了放大器的集电极电流和集电极-发射极电压波形、晶体管的瞬间能量损失、集电极效率和负载网络参数。 - Its configuration is similar to a conventional transistor with the exception of the addition of a v or π layer ( transition region) between collector and base regions and it is operated as a diode.
除在收集结与基区之间插入了一个v型或π型渡越区外，器件的结构与通常晶体管的很相似，但它是作为两端器件运用的。 - So do the transistor with high collector-emitter voltage and high collector current.
其次，发射装置选用了高耐压的晶体三极管完成对电压和电流的放大。